N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

RS Stock No.:: 827-6113
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 Toshiba TK12E60W,S1VX(S

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Price Each (In a Pack of 5)**

HK$18.30

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Units	Per unit	Per Pack**
5 - 20	HK$18.30	HK$91.50
25 - 45	HK$17.96	HK$89.80
50 - 120	HK$17.64	HK$88.20
125 - 245	HK$17.32	HK$86.60
250 +	HK$17.02	HK$85.10

**price indicative

RS Stock No.:: 827-6113
Mfr. Part No.:: TK12E60W,S1VX(S
Manufacturer:: Toshiba

TK12E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	4.45mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Transistor Material	Si
Length	10.16mm
Maximum Operating Temperature	+150 °C
Height	15.1mm