N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK Toshiba TK12P60W,RVQ(S

RS Stock No.:: 827-6126
Mfr. Part No.:: TK12P60W,RVQ(S
Manufacturer:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK Toshiba TK12P60W,RVQ(S

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Price Each (In a Pack of 4)

HK$15.825

1560 In stock for delivery within 3 working days*

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Units	Per unit	Per Pack**
4 - 116	HK$15.825	HK$63.30
120 - 244	HK$15.425	HK$61.70
248 +	HK$15.05	HK$60.20

**price indicative

RS Stock No.:: 827-6126
Mfr. Part No.:: TK12P60W,RVQ(S
Manufacturer:: Toshiba

TK12P60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Package Type	DPAK (TO-252)
Series	TK
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	340 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	6.6mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	6.1mm
Height	2.3mm