Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-3PN TK31J60W,S1VQ(O

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HK$37.50

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1 - 19HK$37.50
20 - 49HK$36.40
50 - 99HK$35.20
100 - 249HK$34.50
250 +HK$33.70

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RS Stock No.:
799-5093
Mfr. Part No.:
TK31J60W,S1VQ(O
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-3PN

Series

DTMOSIV

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

88mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Typical Gate Charge Qg @ Vgs

86nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

150°C

Width

4.5 mm

Height

20mm

Standards/Approvals

No

Length

15.5mm

Automotive Standard

No

COO (Country of Origin):
JP

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