Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
- RS Stock No.:
- 818-1444
- Mfr. Part No.:
- SI9407BDY-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
HK$151.60
FREE delivery for orders over HK$250.00
Last RS stock
- Final 1,300 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 620 | HK$7.58 | HK$151.60 |
| 640 - 1240 | HK$7.385 | HK$147.70 |
| 1260 + | HK$7.27 | HK$145.40 |
*price indicative
- RS Stock No.:
- 818-1444
- Mfr. Part No.:
- SI9407BDY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si9407BDY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 5mm | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si9407BDY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 5mm | ||
Height 1.55mm | ||
Width 4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC SI9933CDY-T1-GE3
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23