Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 20 units)*

HK$140.50

Add to Basket
Select or type quantity
In Stock
  • 4,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 620HK$7.025HK$140.50
640 - 1240HK$6.905HK$138.10
1260 +HK$6.775HK$135.50

*price indicative

Packaging Options:
RS Stock No.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41.5nC

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.2W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Length

5mm

Height

1.55mm

Width

4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links