P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

RS Stock No.:: 814-1213
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

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Bulk discount available

Price Each (In a Pack of 20)

HK$2.863

2940 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
20 - 740	HK$2.863	HK$57.26
760 - 1480	HK$2.792	HK$55.84
1500 +	HK$2.749	HK$54.98

**price indicative

RS Stock No.:: 814-1213
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

SiA449DJ, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	10.4 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-363
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	38 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Width	2.15mm
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	2.15mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.8mm

P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3

FREE delivery for orders over HK$850.00

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor