P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

RS Stock No.:: 812-3215
Mfr. Part No.:: SI4431CDY-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

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Bulk discount available

Price Each (In a Pack of 20)

HK$4.956

40 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
20 - 620	HK$4.956	HK$99.12
640 - 1240	HK$4.832	HK$96.64
1260 +	HK$4.758	HK$95.16

**price indicative

RS Stock No.:: 812-3215
Mfr. Part No.:: SI4431CDY-T1-GE3
Manufacturer:: Vishay

Si4431CDY, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	7.2 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	49 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	4.2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.55mm

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

FREE delivery for orders over HK$850.00

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor