N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

RS Stock No.:: 812-3132
Mfr. Part No.:: SI2366DS-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 pack of 20 units)**

HK$55.90

80 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Pack**
20 - 740	HK$2.795	HK$55.90
760 - 1480	HK$2.725	HK$54.50
1500 +	HK$2.685	HK$53.70

**price indicative

RS Stock No.:: 812-3132
Mfr. Part No.:: SI2366DS-T1-GE3
Manufacturer:: Vishay

Si2366DS, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.4mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Length	3.04mm
Height	1.02mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.