N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

RS Stock No.:: 802-4461
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

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Price Each

HK$77.20

5 In stock for delivery within 3 working days*

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Units	Per unit
1 - 7	HK$77.20
8 - 14	HK$75.85
15 +	HK$74.46

RS Stock No.:: 802-4461
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	500 V
Package Type	TO-3P
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Length	15.8mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	96 nC @ 10 V
Width	4.9mm
Transistor Material	Si
Height	20.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

FREE delivery for orders over HK$850.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series