N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

RS Stock No.:: 146-1755
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

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Bulk discount available

Subtotal (1 tube of 30 units)**

HK$1,822.59

58 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over HK$850.00

Units	Per unit	Per Tube**
30 - 30	HK$60.753	HK$1,822.59
60 - 90	HK$58.93	HK$1,767.90
120 +	HK$57.162	HK$1,714.86

**price indicative

RS Stock No.:: 146-1755
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Polar3
Package Type	TO-3PN
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	96 nC @ 10 V
Transistor Material	Si
Length	15.8mm
Width	4.9mm
Height	20.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

FREE delivery for orders over HK$850.00

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series