Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3
- RS Stock No.:
- 787-9525
- Mfr. Part No.:
- SQS462EN-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 5 units)*
HK$45.20
FREE delivery for orders over HK$250.00
Last RS stock
- Final 5,950 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | HK$9.04 | HK$45.20 |
| 750 - 1495 | HK$8.82 | HK$44.10 |
| 1500 + | HK$8.68 | HK$43.40 |
*price indicative
- RS Stock No.:
- 787-9525
- Mfr. Part No.:
- SQS462EN-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
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- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252
