Vishay SQ Rugged Type N-Channel MOSFET, 40 A, 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- RS Stock No.:
- 787-9484
- Mfr. Part No.:
- SQD40N06-14L_GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$73.40
FREE delivery for orders over HK$250.00
Being discontinued
- 180 left, ready to ship from another location
- Final 1,795 unit(s) shipping from 30 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | HK$14.68 | HK$73.40 |
| 25 + | HK$14.30 | HK$71.50 |
*price indicative
- RS Stock No.:
- 787-9484
- Mfr. Part No.:
- SQD40N06-14L_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
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- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
