N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC Vishay SiHG32N50D-GE3

RS Stock No.:: 787-9207
Mfr. Part No.:: SiHG32N50D-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC Vishay SiHG32N50D-GE3

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Price Each

HK$39.60

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Units	Per unit
1 - 6	HK$39.60
7 +	HK$38.60

RS Stock No.:: 787-9207
Mfr. Part No.:: SiHG32N50D-GE3
Manufacturer:: Vishay

SiHG32N50D, D Series Power MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	500 V
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	390 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Width	5.31mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	64 nC @ 10 V
Length	15.87mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	20.82mm

N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC Vishay SiHG32N50D-GE3

FREE delivery for orders over HK$850.00

N-Channel MOSFET, 500V, Vishay Semiconductor