Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

HK$657.60

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Units
Per unit
Per Tube*
25 - 25HK$26.304HK$657.60
50 - 75HK$25.728HK$643.20
100 +HK$25.156HK$628.90

*price indicative

RS Stock No.:
188-4876
Mfr. Part No.:
SIHG21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

SiHG21N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

235mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

32W

Typical Gate Charge Qg @ Vgs

48nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

20.82mm

Length

15.87mm

Standards/Approvals

No

Automotive Standard

No

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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