Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC SI4532CDY-T1-GE3

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HK$101.00

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Per Pack*
20 - 620HK$5.05HK$101.00
640 - 1240HK$4.925HK$98.50
1260 +HK$4.845HK$96.90

*price indicative

Packaging Options:
RS Stock No.:
787-9020
Mfr. Part No.:
SI4532CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

2.78W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

4 mm

Height

1.5mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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