Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

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Subtotal (1 pack of 5 units)*

HK$53.80

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Being discontinued
  • Plus 40 unit(s) shipping from 05 June 2026
  • Final 3,345 unit(s) shipping from 12 June 2026

Units
Per unit
Per Pack*
5 - 620HK$10.76HK$53.80
625 +HK$10.50HK$52.50

*price indicative

Packaging Options:
RS Stock No.:
710-3345
Mfr. Part No.:
SI4559ADY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.4W

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

5mm

Height

1.5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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