Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC SI4948BEY-T1-GE3

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Subtotal (1 pack of 5 units)*

HK$54.70

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Last RS stock
  • Plus 15 unit(s) shipping from 08 June 2026
  • Final 2,945 unit(s) shipping from 15 June 2026

Units
Per unit
Per Pack*
5 - 620HK$10.94HK$54.70
625 - 1245HK$10.68HK$53.40
1250 +HK$10.46HK$52.30

*price indicative

Packaging Options:
RS Stock No.:
787-9008
Mfr. Part No.:
SI4948BEY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

2.4W

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Length

5mm

Standards/Approvals

No

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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