N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STMicroelectronics STD9N60M2

RS Stock No.:: 786-3628P
Mfr. Part No.:: STD9N60M2
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STMicroelectronics STD9N60M2

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2475 In stock for delivery within 3 working days

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

HK$10.384

Units	Per unit
625 - 1245	HK$10.384
1250 +	HK$10.226

RS Stock No.:: 786-3628P
Mfr. Part No.:: STD9N60M2
Manufacturer:: STMicroelectronics

ST*9N60M2 N-channel Low Qg Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.5 A
Maximum Drain Source Voltage	650 V
Package Type	DPAK (TO-252)
Series	MDmesh M2
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	780 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	60 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Operating Temperature	+150 °C
Length	6.6mm
Typical Gate Charge @ Vgs	10 nC @ 10 V
Width	6.2mm
Transistor Material	Si
Number of Elements per Chip	1
Height	2.4mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 5.5 A, 650 V, 3-Pin DPAK STMicroelectronics STD9N60M2

N-channel MDmesh™ M2 Series, STMicroelectronics