STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 761-0418P
- Mfr. Part No.:
- STD18N55M5
- Manufacturer:
- STMicroelectronics
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- RS Stock No.:
- 761-0418P
- Mfr. Part No.:
- STD18N55M5
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | TO-252 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type TO-252 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Length 6.6mm | ||
Width 6.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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