STMicroelectronics Type N-Channel MOSFET, 2.1 A, 900 V Enhancement, 3-Pin TO-220 STP2NK90Z
- RS Stock No.:
- 761-0099
- Mfr. Part No.:
- STP2NK90Z
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$70.50
FREE delivery for orders over HK$250.00
In Stock
- Plus 1,415 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | HK$14.10 | HK$70.50 |
| 15 - 20 | HK$13.78 | HK$68.90 |
| 25 + | HK$13.52 | HK$67.60 |
*price indicative
- RS Stock No.:
- 761-0099
- Mfr. Part No.:
- STP2NK90Z
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.6 mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.6 mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 STP3NK90ZFP
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 STP3NK90Z
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 STP9NK90Z
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-220 STP6NK90Z