Toshiba Type P-Channel MOSFET, 3 A, 20 V Enhancement, 3-Pin UFM SSM3J135TU(TE85L)
- RS Stock No.:
- 756-2757
- Mfr. Part No.:
- SSM3J135TU(TE85L)
- Manufacturer:
- Toshiba
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Bulk discount available
Subtotal (1 pack of 10 units)*
HK$29.50
FREE delivery for orders over HK$250.00
In Stock
- 50 unit(s) ready to ship from another location
- Plus 1,350 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | HK$2.95 | HK$29.50 |
| 50 - 90 | HK$2.864 | HK$28.64 |
| 100 - 240 | HK$2.776 | HK$27.76 |
| 250 - 490 | HK$2.715 | HK$27.15 |
| 500 + | HK$2.656 | HK$26.56 |
*price indicative
- RS Stock No.:
- 756-2757
- Mfr. Part No.:
- SSM3J135TU(TE85L)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UFM | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Forward Voltage Vf | 0.91V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.7mm | |
| Width | 2.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UFM | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Forward Voltage Vf 0.91V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.7mm | ||
Width 2.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
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