Toshiba SSM3 Type N-Channel MOSFET, 2.2 A, 30 V Enhancement, 3-Pin UFM SSM3K116TU(TE85L)
- RS Stock No.:
- 639-5477
- Mfr. Part No.:
- SSM3K116TU(TE85L)
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
HK$30.00
FREE delivery for orders over HK$250.00
In Stock
- Plus 160 unit(s) shipping from 26 January 2026
- Plus 2,520 unit(s) shipping from 02 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$3.00 | HK$30.00 |
| 20 - 40 | HK$2.93 | HK$29.30 |
| 50 - 90 | HK$2.85 | HK$28.50 |
| 100 - 190 | HK$2.78 | HK$27.80 |
| 200 + | HK$2.71 | HK$27.10 |
*price indicative
- RS Stock No.:
- 639-5477
- Mfr. Part No.:
- SSM3K116TU(TE85L)
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UFM | |
| Series | SSM3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Height | 0.7mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UFM | ||
Series SSM3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals No | ||
Height 0.7mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, SSM3K Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba SSM3 Type P-Channel MOSFET 30 V Enhancement, 3-Pin UFM SSM3J117TU(TE85L)
- Toshiba SSM3 Type N-Channel MOSFET 30 V EnhancementF)
- Toshiba SSM3 Type N-Channel MOSFET 20 V EnhancementF)
- Toshiba SSM3 Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-346 SSM3K15F(F)
- Toshiba Type P-Channel MOSFET 20 V Enhancement, 3-Pin UFM SSM3J135TU(TE85L)
- Toshiba Type P-Channel MOSFET 20 V Enhancement, 3-Pin UFM SSM3J133TU(TE85L)
- onsemi FDN337N Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- onsemi FDN337N Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 FDN337N