Vishay Si4435DDY Type P-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3

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Subtotal (1 pack of 10 units)*

HK$50.80

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Units
Per unit
Per Pack*
10 - 620HK$5.08HK$50.80
630 - 1240HK$4.95HK$49.50
1250 +HK$4.87HK$48.70

*price indicative

Packaging Options:
RS Stock No.:
710-3339
Mfr. Part No.:
SI4435DDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.1A

Maximum Drain Source Voltage Vds

30V

Series

Si4435DDY

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

32nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4 mm

Height

1.5mm

Length

5mm

Standards/Approvals

No

Automotive Standard

No

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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