Vishay IRF840A Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840APBF
- RS Stock No.:
- 542-9440
- Distrelec Article No.:
- 304-23-891
- Mfr. Part No.:
- IRF840APBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
HK$22.60
FREE delivery for orders over HK$250.00
In Stock
- 729 unit(s) ready to ship from another location
- Plus 2,961 unit(s) shipping from 20 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 12 | HK$22.60 |
| 13 - 24 | HK$22.40 |
| 25 + | HK$21.70 |
*price indicative
- RS Stock No.:
- 542-9440
- Distrelec Article No.:
- 304-23-891
- Mfr. Part No.:
- IRF840APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF840A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF840A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF840A Series Power MOSFET, 500V Drain Source Voltage, 125W Power Dissipation - IRF840APBF
This power MOSFET is a high-voltage N-channel enhancement device intended for switching and power-control roles in industrial electronics. It operates across a broad ambient range and is supplied in a TO-220AB through-hole package for straightforward mounting in power assemblies. The device is suitable where durable thermal margins and standard gate-drive levels are used.
Features and Benefits:
• 500V drain rating enables high-voltage switching applications
• 8A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial power handling
• 850mΩ Rds(on) reduces conduction losses at low gate drive
• 38nC typical gate charge minimises switching energy
• 30V gate-source limit provides robust gate-voltage tolerance
• 8A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial power handling
• 850mΩ Rds(on) reduces conduction losses at low gate drive
• 38nC typical gate charge minimises switching energy
• 30V gate-source limit provides robust gate-voltage tolerance
Applications
• Suitable for industrial high-voltage converters and inverters
• Ideal for switch-mode power supply primary switching
• Used with discrete motor-control stages requiring 8A switching
• Can be used for power-management in lab test equipment
• Suitable for replacement in compatible TO-220AB assemblies
• Ideal for switch-mode power supply primary switching
• Used with discrete motor-control stages requiring 8A switching
• Can be used for power-management in lab test equipment
• Suitable for replacement in compatible TO-220AB assemblies
What thermal extremes can it tolerate during operation?
The device is rated to operate from -55°C up to 150°C junction temperature, supporting use in demanding temperature environments.
What mounting and board-assembly approach is recommended?
The TO-220AB package is designed for through-hole mounting and allows direct fastening to heatsinks for improved thermal dissipation.
How does the gate-charge value affect switching design?
A 38nC gate charge determines the drive current and driver selection to achieve desired switching speeds and limits driven switching losses.
What gate-voltage constraints should be observed to avoid damage?
Gate-source voltage must not exceed 30V to prevent gate-oxide stress and ensure long-term reliability.
Related links
- Vishay IRF840A Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840APBF
- Vishay IRF840 Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF840S Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-263 IRF840SPBF
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB SIHP11N80AEF-GE3
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-220AB
- STMicroelectronics MDmesh M2 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP STF12N65M2
- Vishay EF Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3
- Vishay E Type N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3