Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

HK$23,994.00

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Units
Per unit
Per Reel*
3000 - 3000HK$7.998HK$23,994.00
6000 - 9000HK$7.838HK$23,514.00
12000 +HK$7.603HK$22,809.00

*price indicative

RS Stock No.:
210-4978
Mfr. Part No.:
SIHD11N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

9.4mm

Width

6.4 mm

Height

2.2mm

Automotive Standard

No

The Vishay E Series Power MOSFET has DPAK (TO-252) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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