Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252

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Subtotal (1 pack of 25 units)*

HK$195.00

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Units
Per unit
Per Pack*
25 - 725HK$7.80HK$195.00
750 - 1475HK$7.608HK$190.20
1500 +HK$7.376HK$184.40

*price indicative

RS Stock No.:
200-6829
Mfr. Part No.:
SIHD690N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHD690N60E-GE3 is a E Series power MOSFET.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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