Vishay IRF740S Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-263 IRF740SPBF
- RS Stock No.:
- 542-9406
- Distrelec Article No.:
- 171-15-868
- Mfr. Part No.:
- IRF740SPBF
- Manufacturer:
- Vishay
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Units | Per unit |
|---|---|
| 1 - 12 | HK$27.80 |
| 13 - 24 | HK$27.10 |
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- RS Stock No.:
- 542-9406
- Distrelec Article No.:
- 171-15-868
- Mfr. Part No.:
- IRF740SPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Series | IRF740S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 2V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Series IRF740S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 2V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
Vishay IRF740S Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740SPBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion roles in surface-mount assemblies. It operates across a wide ambient range and is intended for applications requiring controlled gate drive and robust power handling while conforming to RoHS directives.
Features and Benefits:
• 400V drain-source rating enables high-voltage switching
• 10A continuous drain current supports substantial load currents
• 125W power-dissipation capability improves thermal headroom
• 550mΩ Rds(on) balances conduction losses and control simplicity
• 63nC typical gate charge allows predictable switching behaviour
• 20V maximum gate-source rating protects gate-drive design
• 10A continuous drain current supports substantial load currents
• 125W power-dissipation capability improves thermal headroom
• 550mΩ Rds(on) balances conduction losses and control simplicity
• 63nC typical gate charge allows predictable switching behaviour
• 20V maximum gate-source rating protects gate-drive design
Applications
• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor-drive stages and inverters
• Used with isolated gate drivers in renewable-energy converters
• Can be used for DC-DC converters handling moderate currents
• Appropriate for power management on densely populated SMT boards
• Ideal for high-voltage motor-drive stages and inverters
• Used with isolated gate drivers in renewable-energy converters
• Can be used for DC-DC converters handling moderate currents
• Appropriate for power management on densely populated SMT boards
What temperature extremes can this device tolerate during operation?
It is specified to function from -55°C up to 150°C, covering typical commercial and extended-industrial ranges.
How does the package affect board-level assembly and thermal performance?
The TO-263 surface-mount package permits soldered thermal transfer to PCB copper planes and supports higher dissipation in compact SMT layouts.
What gate-drive constraints should designers observe to avoid damage?
The gate-source voltage must not exceed 20V to prevent gate-oxide stress and potential failure.
How many external connections does the device present for circuit integration?
It provides three pins consistent with standard single-channel MOSFET connections for drain, source and gate.
Related links
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