Vishay IRF740A Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF
- RS Stock No.:
- 178-0831
- Mfr. Part No.:
- IRF740APBF
- Manufacturer:
- Vishay
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HK$515.40
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In Stock
- 900 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | HK$10.308 | HK$515.40 |
| 250 + | HK$9.276 | HK$463.80 |
*price indicative
- RS Stock No.:
- 178-0831
- Mfr. Part No.:
- IRF740APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF740A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF740A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRF740A Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740APBF
This power MOSFET is a high-voltage N-channel transistor engineered for switching roles in power electronics. It operates across a broad temperature range and is supplied in a through-hole TO-220AB package suitable for heat-sinking and straightforward mounting. The device is RoHS-compliant and designed for enhancement-mode switching in circuits requiring significant voltage handling.
Features and Benefits:
• 400V drain-source rating enabling high-voltage switching capability
• 10A continuous drain current for steady power delivery
• 125W maximum dissipation supports higher-load operation
• 550 mΩ RDS(on) allowing predictable conduction losses
• 36 nC typical gate charge for manageable gate driving
• 30V maximum gate-source voltage protects against overdrive
• 10A continuous drain current for steady power delivery
• 125W maximum dissipation supports higher-load operation
• 550 mΩ RDS(on) allowing predictable conduction losses
• 36 nC typical gate charge for manageable gate driving
• 30V maximum gate-source voltage protects against overdrive
Applications
• Suitable for offline power supplies and converters
• Ideal for motor-drive switching stages
• Used with inverter circuits requiring high voltage
• Can be used for industrial switching regulators
• Appropriate for through-hole prototyping and repair work
• Ideal for motor-drive switching stages
• Used with inverter circuits requiring high voltage
• Can be used for industrial switching regulators
• Appropriate for through-hole prototyping and repair work
What are the thermal limits for reliable operation?
The device is rated to function between -55 °C and 150 °C, permitting use in demanding thermal environments when coupled with adequate cooling.
How does the package aid thermal management?
The TO-220AB through-hole format allows attachment to a heatsink and offers a low thermal‑resistance path for dissipating up to 125W under specified conditions.
What gate drive considerations apply for fast switching?
With a typical gate charge of 36 nC, driver selection should match the desired switching speed and account for switching losses and available drive current.
How should the forward voltage be treated in design calculations?
A forward voltage of 2V should be included when estimating conduction losses and voltage drops in circuits that rely on body‑diode behaviour or synchronous switching.
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