Vishay IRFB9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF
- RS Stock No.:
- 541-1922
- Mfr. Part No.:
- IRFB9N60APBF
- Manufacturer:
- Vishay
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| 1 - 12 | HK$16.40 |
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- RS Stock No.:
- 541-1922
- Mfr. Part No.:
- IRFB9N60APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | IRFB9N60A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 170W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series IRFB9N60A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 170W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Width 4.7mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRFB9N60A Series Power MOSFET, 600V Drain-Source Voltage, 9.2A Continuous Drain Current - IRFB9N60APBF
This power MOSFET is a high-voltage N-channel semiconductor device intended for switching and power-conversion roles in industrial electronics. It operates as an enhancement-mode transistor and is supplied in a through-hole TO-220AB package suitable for solder-mount applications. The device is designed for use where robust voltage handling and moderate current capability are required within equipment assemblies.
Features and Benefits:
• 600V drain rating enables high-voltage switching applications • 9.2A continuous drain current supports sustained load driving • 750mΩ Rds(on) reduces conduction losses in low-current circuits • 170W power dissipation allows substantial thermal headroom • 49nC typical gate charge at Vgs 30V facilitates predictable drive timing • Rated to 150°C maximum operating temperature tolerates elevated junction conditions
Applications
• Suitable for line-frequency switch-mode power supplies • Ideal for industrial motor drive gate stages • Used with high-voltage DC-DC converter topologies • Can be used for power braking and snubber networks • Used for lab and prototyping where through-hole mounting is preferred
What gate drive constraints should I consider for reliable switching?
Drive voltages should not exceed 30V relative to the source and gate charge of about 49nC at that level defines the required driver current and switching timing.
How does thermal management influence performance under continuous load?
With 170W Pd, heat-sinking is necessary to maintain junction temperature below the 150°C limit and to achieve the specified continuous drain current without thermal derating.
What mounting method is recommended for mechanically stable connections?
Through-hole solder mounting in the TO-220AB package provides robust mechanical and thermal contact suitable for repeated thermal cycles.
What environmental temperature range can it operate within?
It is specified for operation down to -55°C and up to 150°C, allowing use across wide ambient conditions if thermal design is appropriate.
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