Vishay IRFS9N60A Type N-Channel Power MOSFET, 9.2 A, 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF
- RS Stock No.:
- 178-0850
- Mfr. Part No.:
- IRFS9N60APBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$589.30
FREE delivery for orders over HK$250.00
In Stock
- 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | HK$11.786 | HK$589.30 |
| 250 + | HK$10.608 | HK$530.40 |
*price indicative
- RS Stock No.:
- 178-0850
- Mfr. Part No.:
- IRFS9N60APBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFS9N60A | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 170W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFS9N60A | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 170W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Width 9.65mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Vishay IRFS9N60A Series Power MOSFET, 600V Maximum Drain Source Voltage, 9.2A Maximum Continuous Drain Current - IRFS9N60APBF
This power MOSFET is a high-voltage N-channel device designed for switching and power conversion tasks in industrial and electronic systems. It operates across a wide temperature range and is intended for surface-mount integration on power assemblies where high-voltage capability and robust thermal handling are required.
Features and Benefits:
• 600V drain withstand voltage enabling high-voltage switching
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
• 9.2 A continuous drain current for steady load handling
• 750 mΩ on-resistance minimises conduction losses
• 49 nC typical gate charge for predictable switching energy
• 170W power dissipation supports elevated power throughput
• 150 °C maximum junction temperature for high-temperature operation
Applications
• Suitable for SMPS primary switch functions in power supplies
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
• Ideal for high-voltage inverter stages in industrial drives
• Used for switch-mode motor controllers handling elevated voltages
• Can be used for power-factor correction front-end circuits
What mounting format does it require for assembly?
It is supplied for surface mounting in a TO-263 package with three pins to suit standard heat-sinked PCB footprints.
What gate limits must be observed to avoid damage?
The gate must not be driven beyond ±30V relative to source to prevent gate oxide overstress.
How does thermal management influence performance?
With 170W rated dissipation and a 150 °C maximum junction temperature, adequate PCB copper and heatsinking are needed to maintain junction temperature under heavy load.
What environmental specification affects materials selection?
The component conforms to RoHS requirements, influencing soldering and material choices in assembly.
Related links
- Vishay IRFS9N60A Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 IRFS9N60APBF
- Vishay IRFB9N60A Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220AB
- Vishay IRFB9N60A Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-220AB IRFB9N60APBF
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay E Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- Vishay EF Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3