Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF
- RS Stock No.:
- 541-0020
- Distrelec Article No.:
- 171-15-835
- Mfr. Part No.:
- IRF740PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
HK$15.80
FREE delivery for orders over HK$250.00
In Stock
- Plus 290 unit(s) shipping from 20 July 2026
- Plus 677 unit(s) shipping from 27 July 2026
- Plus 1,000 unit(s) shipping from 02 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 12 | HK$15.80 |
| 13 - 24 | HK$15.60 |
| 25 + | HK$15.20 |
*price indicative
- RS Stock No.:
- 541-0020
- Distrelec Article No.:
- 171-15-835
- Mfr. Part No.:
- IRF740PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF740 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.7mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF740 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.7mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRF740 Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for use in industrial switching and power-control circuits. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package suitable for assemblies where robust mounting and straightforward heat-sinking are required. The device is intended for applications demanding sustained current handling and elevated voltage tolerance.
Features and Benefits:
• 400V drain-source rating for high-voltage switching applications • 10A continuous drain current to support moderate power loads • 125W power dissipation for reliable thermal performance • 550mΩ RDS(on) enabling efficient conduction in switching roles • 63nC typical gate charge to inform drive requirements • 20V maximum gate-source voltage for gate-drive margin
Applications
• Suitable for switch-mode power supply primary switching • Ideal for motor-control inverter stages in automation systems • Used for high-voltage power converters in industrial equipment • Can be used for power management in test and measurement rigs
What mounting method does the device require for heat management?
It is a through-hole component in a TO-220AB package, allowing direct attachment to heatsinks using a fastener and insulating hardware if required.
What temperature extremes can it tolerate during operation?
The device is specified to operate down to -55°C and up to 150°C, making it suitable for a wide range of environmental conditions.
What should be considered when designing the gate drive?
The maximum gate-source voltage is 20V and the typical gate charge is 63nC at VGS, so the driver must supply sufficient charge and respect the 20V limit to avoid gate overstress.
Is the device compliant with common environmental material standards?
The component conforms to RoHS directives on restricted hazardous substances.
Related links
- Vishay IRF740 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740PBF
- Vishay IRF740A Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB
- Vishay IRF740LC Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB
- Vishay IRF740LC Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF
- Vishay IRF740A Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF740APBF
- Vishay IRF710 Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB
- Vishay D Series Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB
- Vishay IRF Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF720PBF