STMicroelectronics Type N-Channel MOSFET, 10 A, 800 V Enhancement, 7-Pin Tape & Reel
- RS Stock No.:
- 261-5040P
- Mfr. Part No.:
- SCT040HU65G3AG
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
HK$1,219.00
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In Stock
- Plus 177 unit(s) shipping from 31 August 2026
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Units | Per unit |
|---|---|
| 10 - 99 | HK$121.90 |
| 100 - 249 | HK$118.20 |
| 250 + | HK$115.80 |
*price indicative
- RS Stock No.:
- 261-5040P
- Mfr. Part No.:
- SCT040HU65G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Width | 14mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 3.5mm | ||
Length 18.58mm | ||
Width 14mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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