Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- RS Stock No.:
- 258-3870
- Mfr. Part No.:
- IPD90P04P4L04ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
HK$20,117.50
FREE delivery for orders over HK$250.00
In Stock
- 7,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$8.047 | HK$20,117.50 |
| 5000 - 5000 | HK$7.886 | HK$19,715.00 |
| 7500 + | HK$7.649 | HK$19,122.50 |
*price indicative
- RS Stock No.:
- 258-3870
- Mfr. Part No.:
- IPD90P04P4L04ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, -40V Maximum Drain-Source Voltage, 125W Maximum Power Dissipation - IPD90P04P4L04ATMA2
This MOSFET is a P‑channel enhancement device designed for surface‑mount power switching and control in demanding electronic systems. It operates across a broad temperature span and is suited to high‑current applications where low conduction loss and defined gate‑drive thresholds are required. The device meets recognised environmental and automotive stress standards for use in engineered assemblies.
Features and Benefits:
• Low on‑resistance reduces conduction losses for efficiency gains
• High continuous current capability supports heavy‑load switching
• 135 nC typical gate charge enables controlled switching behaviour
• 125W power dissipation permits sustained power handling
• Wide operating temperature range allows extended environmental tolerance
• High continuous current capability supports heavy‑load switching
• 135 nC typical gate charge enables controlled switching behaviour
• 125W power dissipation permits sustained power handling
• Wide operating temperature range allows extended environmental tolerance
Applications
• Suitable for high‑current power distribution modules in vehicles
• Ideal for thermally challenging industrial power converters
• Used with gate‑drive circuits requiring 5V compatibility
• Can be used for surface‑mount board‑level power switching
• Suitable for RoHS‑compliant automotive electronic assemblies
• Ideal for thermally challenging industrial power converters
• Used with gate‑drive circuits requiring 5V compatibility
• Can be used for surface‑mount board‑level power switching
• Suitable for RoHS‑compliant automotive electronic assemblies
What gate‑drive voltage range is compatible with this device?
It accepts a maximum gate‑source voltage of 5V, which aligns with common logic‑level drivers.
How does the device behave in extreme temperatures?
It is specified to operate from -55°C up to 175°C, enabling use in wide‑temperature environments.
What package and mounting method are provided for assembly?
The component is supplied in a TO‑252 package configured for surface mounting on circuit boards.
What approvals and environmental standards does it meet?
It conforms to DIN IEC 68‑1 and RoHS requirements and satisfies automotive AEC‑Q101 qualification.
What electrical limits should designers observe for safe operation?
The device is rated for -40V drain-source voltage, -90A continuous drain current, and a maximum gate charge of 135 nC.
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252