Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2
- RS Stock No.:
- 258-3861
- Mfr. Part No.:
- IPD70P04P409ATMA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
HK$12,350.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 25 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | HK$4.94 | HK$12,350.00 |
| 5000 - 5000 | HK$4.841 | HK$12,102.50 |
| 7500 + | HK$4.744 | HK$11,860.00 |
*price indicative
- RS Stock No.:
- 258-3861
- Mfr. Part No.:
- IPD70P04P409ATMA2
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -73A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -73A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 75W Power Dissipation -40V Drain-Source Voltage - IPD70P04P409ATMA2
This MOSFET is a P‑channel enhancement‑mode power transistor designed for surface‑mount applications in demanding electrical environments. It operates across a wide temperature span from -55°C to 175°C and is suitable where high current handling and Compact mounting are required. The device complies with RoHS and meets automotive test standard AEC‑Q101 for use in automotive‑grade electronics.
Features and Benefits:
• 8.9mΩ Rds(on) reduces conduction losses and improves efficiency
• -73A continuous drain current supports heavy current demands
• 75W power dissipation allows sustained power handling
• 54 nC typical gate charge enables predictable switching behaviour
• TO‑252 package facilitates Compact surface mounting
• -73A continuous drain current supports heavy current demands
• 75W power dissipation allows sustained power handling
• 54 nC typical gate charge enables predictable switching behaviour
• TO‑252 package facilitates Compact surface mounting
Applications
• Suitable for high‑current load switching in automotive systems
• Ideal for reverse‑polarity protection in power rails
• Used with power‑management circuits in vehicular electronics
• Can be used for synchronous control in DC power stages
• Suitable for thermally stable designs across wide temperature ranges
• Ideal for reverse‑polarity protection in power rails
• Used with power‑management circuits in vehicular electronics
• Can be used for synchronous control in DC power stages
• Suitable for thermally stable designs across wide temperature ranges
What voltage rating applies between drain and source?
The device is rated for -40V maximum drain‑to‑source voltage.
What gate voltage limits must be observed to avoid damage?
Gate‑to‑source voltage must not exceed 20V to prevent gate stress.
How does the package affect PCB assembly?
The TO‑252 surface‑mount form factor supports standard solder reflow processes and Compact board layouts.
What thermal extremes can the device tolerate during operation?
It is specified for operation from -55°C up to 175°C for wide‑range thermal resilience.
Related links
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD19DP10NMATMA1
- Infineon IPD Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1