Infineon HEXFET N-Channel MOSFET, 10 A, 80 V Enhancement, 8-Pin SO-8 IRF7854TRPBF
- RS Stock No.:
- 257-9322
- Mfr. Part No.:
- IRF7854TRPBF
- Manufacturer:
- Infineon
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HK$96.90
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- 2,700 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$19.38 | HK$96.90 |
| 50 - 95 | HK$18.44 | HK$92.20 |
| 100 - 495 | HK$17.32 | HK$86.60 |
| 500 - 1995 | HK$16.14 | HK$80.70 |
| 2000 + | HK$14.80 | HK$74.00 |
*price indicative
- RS Stock No.:
- 257-9322
- Mfr. Part No.:
- IRF7854TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 80V Drain‑Source Voltage, 10A Continuous Drain Current - IRF7854TRPBF
This MOSFET is an N‑channel enhancement device supplied in a surface‑mount SO‑8 package for Compact power switching. It operates across a wide temperature span and is designed for applications requiring moderate power dissipation and low conduction losses. The device conforms to RoHS requirements and is intended for use where efficient switching and thermal endurance are needed.
Features and Benefits:
• 13.4mΩ RDS(on) reduces conduction losses
• 80V VDS enables higher‑voltage switching
• 10A continuous drain current supports sustained loads
• 27nC typical gate charge improves switching control
• 2.5W power dissipation manages thermal stress
• 80V VDS enables higher‑voltage switching
• 10A continuous drain current supports sustained loads
• 27nC typical gate charge improves switching control
• 2.5W power dissipation manages thermal stress
Applications
• Suitable for DC motor drive stages
• Ideal for power management in industrial controls
• Used with switching regulators and converters
• Can be used for load switching in telecom equipment
• Suitable for Compact surface‑mounted power modules
• Ideal for power management in industrial controls
• Used with switching regulators and converters
• Can be used for load switching in telecom equipment
• Suitable for Compact surface‑mounted power modules
What gate voltage limits apply during operation?
The device accepts a gate‑to‑source voltage up to 20V.
What thermal range can it tolerate in demanding environments?
It is specified to operate from -55°C up to 150°C.
How does forward voltage affect conduction under body‑diode conditions?
The forward diode exhibits approximately 1.3V during conduction events.
How many pins and what mounting type are used for PCB implementation?
It comes in an 8‑pin SO‑8 package configured for surface mounting.
Related links
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