Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF

RS Stock No.:: 257-9323
Mfr. Part No.:: IRF7862TRPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7862TRPBF

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Subtotal (1 reel of 4000 units)*

HK$23,260.00

FREE delivery for orders over HK$250.00

Temporarily out of stock

Shipping from 15 January 2027

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Units	Per unit	Per Reel*
4000 +	HK$5.815	HK$23,260.00

*price indicative

RS Stock No.:: 257-9323
Mfr. Part No.:: IRF7862TRPBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7862TRPBF

Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 21A Maximum Continuous Drain Current - IRF7862TRPBF

This N-channel enhancement-mode MOSFET in an SO-8 package is a surface-mount power transistor designed for high-current switching in Compact assemblies. It operates across a wide ambient range and complies with RoHS, making it suitable for applications that require Compact, lead-free SMD power devices.

Features and Benefits:

• 4.5mΩ Rds(on) delivers low conduction losses under load
• 30V Vds enables mid-voltage power switching capability
• 21A continuous drain current supports high-current circuits
• 30nC typical gate charge allows moderate switching speed control
• 2.5W power dissipation manages thermal loading in tight spaces

Applications

• Suitable for DC power distribution modules
• Ideal for board-level motor driver stages
• Used with voltage regulators for load switching
• Can be used for battery protection circuits
• Suitable for power management in Compact converters

What gate voltage limits must be observed?

The device must not exceed ±20V between gate and source to prevent gate dielectric stress.

How does the package affect thermal handling?

The SO-8 surface-mount package limits heat-sinking, so board copper and thermal vias are recommended to assist in dissipating the 2.5W allowable power.

What environmental temperature range can it withstand?

It is rated to operate from -55°C up to 150°C, suitable for wide-temperature deployments.

Is this device suitable for automotive qualification?

It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.