Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8 IRF7328TRPBF
- RS Stock No.:
- 257-9305
- Mfr. Part No.:
- IRF7328TRPBF
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
HK$70.80
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$14.16 | HK$70.80 |
| 50 - 95 | HK$13.46 | HK$67.30 |
| 100 - 495 | HK$12.66 | HK$63.30 |
| 500 - 1995 | HK$11.78 | HK$58.90 |
| 2000 + | HK$10.82 | HK$54.10 |
*price indicative
- RS Stock No.:
- 257-9305
- Mfr. Part No.:
- IRF7328TRPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -8A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -8A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
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- Infineon HEXFET Type N-Channel MOSFET 200 V, 8-Pin SO-8
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