Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3
- RS Stock No.:
- 256-7437
- Mfr. Part No.:
- SIZ260DT-T1-GE3
- Manufacturer:
- Vishay
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HK$78.10
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In Stock
- 2,675 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$15.62 | HK$78.10 |
| 50 - 95 | HK$14.84 | HK$74.20 |
| 100 - 245 | HK$13.98 | HK$69.90 |
| 250 - 995 | HK$13.02 | HK$65.10 |
| 1000 + | HK$11.98 | HK$59.90 |
*price indicative
- RS Stock No.:
- 256-7437
- Mfr. Part No.:
- SIZ260DT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | SIZ260DT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0247Ω | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAIR 3 x 3S | ||
Series SIZ260DT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0247Ω | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIZ260DT Series MOSFET, 33W Maximum Power Dissipation, 80V Maximum Drain Source Voltage - SIZ260DT-T1-GE3
This MOSFET is a surface-mount N-channel transistor designed for power switching in compact electronics. It operates across a wide temperature span and is suitable for applications requiring moderate voltage handling and high continuous current capability. The device is RoHS compliant and supplied in a compact PowerPAIR 3x3S package for dense board layouts.
Features and Benefits:
• 80V drain-source rating enables medium-voltage switching
• 8.9A continuous drain current supports high-load circuits
• 0.0247Ω Rds(on) reduces conduction losses for efficiency
• 6.3nC typical gate charge allows faster gate-drive response
• 33W maximum power dissipation manages thermal stress
• 20V gate-source limit provides wide gate-drive margin
• 8.9A continuous drain current supports high-load circuits
• 0.0247Ω Rds(on) reduces conduction losses for efficiency
• 6.3nC typical gate charge allows faster gate-drive response
• 33W maximum power dissipation manages thermal stress
• 20V gate-source limit provides wide gate-drive margin
Applications
• Suitable for DC-DC converter switching stages
• Used for motor drive half-bridge configurations
• Ideal for power management in telecoms equipment
• Can be used for synchronous rectification in SMPS
• Suitable for high-current load switches on compact boards
• Used for motor drive half-bridge configurations
• Ideal for power management in telecoms equipment
• Can be used for synchronous rectification in SMPS
• Suitable for high-current load switches on compact boards
What package footprint should I allow for mounting?
The device is supplied in a PowerPAIR 3x3S surface-mount package with a nominal 3.3mmx3.3mm footprint and eight pins, so design pads must match that compact outline.
How does it behave across temperature extremes?
It is specified to operate from -55°C up to +150°C, maintaining conduction and switching characteristics within that temperature range.
What gate drive constraints must be observed?
The maximum permissible gate-source voltage is 20V
gate-drive circuits should be designed to keep Vgs within this limit to prevent device stress.
How should thermal management be considered in designs?
With a 33W maximum power dissipation, adequate PCB copper, thermal vias or heatsinking should be incorporated to keep junction temperature within safe limits.
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