Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3

RS Stock No.:: 256-7436
Mfr. Part No.:: SIZ260DT-T1-GE3
Manufacturer:: Vishay

Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3

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Subtotal (1 reel of 3000 units)*

HK$17,871.00

FREE delivery for orders over HK$250.00

Temporarily out of stock

Shipping from 18 December 2026

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Units	Per unit	Per Reel*
3000 +	HK$5.957	HK$17,871.00

*price indicative

RS Stock No.:: 256-7436
Mfr. Part No.:: SIZ260DT-T1-GE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8.9A
	Maximum Drain Source Voltage Vds	80V
	Series	SIZ260DT
	Package Type	PowerPAIR 3 x 3S
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0247Ω
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	6.3nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	33W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	3.3mm
	Length	3.3mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8.9A
	Maximum Drain Source Voltage Vds 80V
	Series SIZ260DT
	Package Type PowerPAIR 3 x 3S
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0247Ω
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 6.3nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 33W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 3.3mm
	Length 3.3mm
	Automotive Standard No

Datasheet - SIZ260DT-T1-GE3

Vishay SIZ260DT Series MOSFET, 33W Maximum Power Dissipation, 80V Maximum Drain Source Voltage - SIZ260DT-T1-GE3

This MOSFET is a surface-mount N-channel transistor designed for power switching in compact electronics. It operates across a wide temperature span and is suitable for applications requiring moderate voltage handling and high continuous current capability. The device is RoHS compliant and supplied in a compact PowerPAIR 3x3S package for dense board layouts.

Features and Benefits:

• 80V drain-source rating enables medium-voltage switching
• 8.9A continuous drain current supports high-load circuits
• 0.0247Ω Rds(on) reduces conduction losses for efficiency
• 6.3nC typical gate charge allows faster gate-drive response
• 33W maximum power dissipation manages thermal stress
• 20V gate-source limit provides wide gate-drive margin

Applications

• Suitable for DC-DC converter switching stages
• Used for motor drive half-bridge configurations
• Ideal for power management in telecoms equipment
• Can be used for synchronous rectification in SMPS
• Suitable for high-current load switches on compact boards

What package footprint should I allow for mounting?

The device is supplied in a PowerPAIR 3x3S surface-mount package with a nominal 3.3mmx3.3mm footprint and eight pins, so design pads must match that compact outline.

How does it behave across temperature extremes?

It is specified to operate from -55°C up to +150°C, maintaining conduction and switching characteristics within that temperature range.

What gate drive constraints must be observed?

The maximum permissible gate-source voltage is 20V

gate-drive circuits should be designed to keep Vgs within this limit to prevent device stress.

How should thermal management be considered in designs?

With a 33W maximum power dissipation, adequate PCB copper, thermal vias or heatsinking should be incorporated to keep junction temperature within safe limits.