Vishay Type N-Channel MOSFET, 33 A, 30 V PowerPAK SO-8 SIRA18DP-T1-GE3
- RS Stock No.:
- 256-7433
- Mfr. Part No.:
- SIRA18DP-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 25 units)*
HK$108.50
Add 75 units to get free delivery
Temporarily out of stock
- 3,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | HK$4.34 | HK$108.50 |
| 50 - 75 | HK$4.124 | HK$103.10 |
| 100 - 225 | HK$3.876 | HK$96.90 |
| 250 - 975 | HK$3.604 | HK$90.10 |
| 1000 + | HK$3.316 | HK$82.90 |
*price indicative
- RS Stock No.:
- 256-7433
- Mfr. Part No.:
- SIRA18DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel mosfet its applications are DC, DC conversion, battery protection, load switching and DC, AC inverters.
TrenchFET gen IV power mosfet
100 % Rg and UIS tested
Low Qg for high efficiency
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