Vishay Type N-Channel MOSFET, 60 A, 80 V PowerPAK SO-8L SIJ482DP-T1-GE3
- RS Stock No.:
- 256-7419
- Mfr. Part No.:
- SIJ482DP-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 2 units)*
HK$27.60
Add 20 units to get free delivery
In Stock
- 3,000 unit(s) ready to ship from another location
- Plus 3,000 unit(s) shipping from 27 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | HK$13.80 | HK$27.60 |
| 50 - 98 | HK$13.10 | HK$26.20 |
| 100 - 248 | HK$12.30 | HK$24.60 |
| 250 - 998 | HK$11.45 | HK$22.90 |
| 1000 + | HK$10.55 | HK$21.10 |
*price indicative
- RS Stock No.:
- 256-7419
- Mfr. Part No.:
- SIJ482DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 80 V (D-S) mosfet 60A (Tc) 5W (Ta), 69.4W (Tc) surface mount and its applications are DC, DC primary side switch, synchronous rectification, high current switching.
TrenchFET power mosfet
100 % Rg and UIS tested
Capable of operating with 5 V gate drive
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