Vishay Si4948BEY Type P-Channel MOSFET, -2.4 A, -60 V, 8-Pin SOIC SI4948BEY-T1-E3
- RS Stock No.:
- 256-7363
- Mfr. Part No.:
- SI4948BEY-T1-E3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
HK$68.40
FREE delivery for orders over HK$250.00
Temporarily out of stock
- 1,090 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | HK$13.68 | HK$68.40 |
| 50 - 95 | HK$13.04 | HK$65.20 |
| 100 - 245 | HK$12.24 | HK$61.20 |
| 250 - 995 | HK$11.36 | HK$56.80 |
| 1000 + | HK$10.44 | HK$52.20 |
*price indicative
- RS Stock No.:
- 256-7363
- Mfr. Part No.:
- SI4948BEY-T1-E3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2.4A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | SOIC | |
| Series | Si4948BEY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.15Ω | |
| Maximum Power Dissipation Pd | 1.4W | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2.4A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type SOIC | ||
Series Si4948BEY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.15Ω | ||
Maximum Power Dissipation Pd 1.4W | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.75mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Automotive Standard No | ||
Vishay Si4948BEY Series MOSFET, 60V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - SI4948BEY-T1-E3
This p-channel MOSFET is a surface-mount transistor designed for switching and analogue functions in compact electronic assemblies. It is intended for applications requiring moderate current handling and voltage blocking within a semiconductor package that mounts directly to the circuit board. The device operates across a wide temperature span and complies with common electronic material standards, making it suitable for use in demanding thermal environments.
Features and Benefits:
• Low on-resistance 0.15Ω enabling reduced conduction losses
• Blocking capability 60V for medium-voltage switching
• Continuous drain current 2.4A for sustained load handling
• Gate drive tolerance 20V allowing flexible control voltages
• Typical gate charge 14.5nC for predictable switching behaviour
• Power dissipation 1.4W supporting moderate thermal loads
• Blocking capability 60V for medium-voltage switching
• Continuous drain current 2.4A for sustained load handling
• Gate drive tolerance 20V allowing flexible control voltages
• Typical gate charge 14.5nC for predictable switching behaviour
• Power dissipation 1.4W supporting moderate thermal loads
Applications
• Suitable for power-rail load switching in consumer electronics
• Ideal for reverse-polarity or high-side switch implementations
• Used with compact DC-DC converters in space-limited boards
• Can be used for battery protection and energy-management circuits
• Suitable for signal-level power control in industrial modules
• Ideal for reverse-polarity or high-side switch implementations
• Used with compact DC-DC converters in space-limited boards
• Can be used for battery protection and energy-management circuits
• Suitable for signal-level power control in industrial modules
What package and pin count should I plan for on the PCB?
The component comes in an 8-pin SOIC package intended for surface mounting, so footprint design should match standard 8-pin SOIC land patterns for reliable solder joints.
How does it perform across temperature extremes?
It is rated to operate from -55°C up to 175°C, permitting use in assemblies that experience elevated junction temperatures or cold-start conditions.
Which forward voltage characteristic is relevant for circuit margin calculations?
The device exhibits a forward voltage of -1.2V under conditions relevant to its conduction path, which can be used when estimating voltage drops in power paths.
Are there material or environmental standards applicable to procurement?
The part conforms to RoHS 2002/95/EC and follows IEC 61249-2-21 guidelines for relevant material and composition considerations.
Related links
- Vishay Si4948BEY Type P-Channel MOSFET -60 V, 8-Pin SOIC SI4948BEY-T1-E3
- Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SI4948BEY-T1-GE3
- Vishay Type P-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SI7465DP-T1-E3
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TP0610K Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TP0610K-T1-E3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-E3
- Vishay Si7309DN Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- Vishay Si2325DS Type P-Channel MOSFET -150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3