Vishay IRFR220 Type N-Channel Power MOSFET, 4.8 A, 200 V, 3-Pin TO-252 IRFR220PBF
- RS Stock No.:
- 256-7309
- Mfr. Part No.:
- IRFR220PBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
HK$61.70
FREE delivery for orders over HK$250.00
In Stock
- 1,620 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | HK$6.17 | HK$61.70 |
| 20 - 40 | HK$6.03 | HK$60.30 |
| 50 - 90 | HK$5.93 | HK$59.30 |
| 100 + | HK$5.73 | HK$57.30 |
*price indicative
- RS Stock No.:
- 256-7309
- Mfr. Part No.:
- IRFR220PBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | IRFR220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series IRFR220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.39mm | ||
Automotive Standard No | ||
Vishay IRFR220 Series Power MOSFET, 200V Maximum Drain Source Voltage, 42W Maximum Power Dissipation - IRFR220PBF
This power MOSFET is a high-voltage N-channel transistor intended for switching and amplification tasks in surface-mount designs. It operates across a wide temperature range for demanding environments and is supplied in a compact TO-252 package suitable for PCB-mounted power stages.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching
• 0.8Ω Rds(on) reduces conduction losses under load
• 4.8A continuous drain current supports moderate currents
• 14nC typical gate charge yields faster gate transitions
• 42W maximum power dissipation handles significant thermal stress
• ±20V gate tolerance simplifies drive-voltage selection
• 0.8Ω Rds(on) reduces conduction losses under load
• 4.8A continuous drain current supports moderate currents
• 14nC typical gate charge yields faster gate transitions
• 42W maximum power dissipation handles significant thermal stress
• ±20V gate tolerance simplifies drive-voltage selection
Applications
• Suitable for DC-DC converters requiring 200V devices
• Ideal for switch-mode power supplies in compact layouts
• Used with motor drivers needing moderate current handling
• Can be used for industrial control switching functions
• Suitable for high-voltage protection circuits on PCBs
• Ideal for switch-mode power supplies in compact layouts
• Used with motor drivers needing moderate current handling
• Can be used for industrial control switching functions
• Suitable for high-voltage protection circuits on PCBs
What mounting method is required for this component?
It is intended for surface-mount assembly in the TO-252 footprint and should be soldered directly to the PCB pad for thermal and electrical performance.
How does temperature affect continuous operation limits?
The device is specified to function from -55°C to +150°C
thermal derating must be applied above ambient limits to maintain rated continuous current and dissipation.
What gate-drive considerations are recommended?
The maximum gate-source voltage is 20V, so gate drivers should limit amplitude within this range and account for the 14nC typical gate charge when sizing driver current.
What package height should be allowed in enclosure designs?
Mechanical clearance should accommodate a component height of 2.39mm measured from the PCB to the highest point.
Related links
- Vishay IRFR220 Type N-Channel Power MOSFET 200 V, 3-Pin TO-252 IRFR220PBF
- Vishay IRFR Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR220TRPBF
- Vishay IRFR Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-252 IRFR210TRPBF
- Vishay IRF630 Type N-Channel Power MOSFET 200 V, 3-Pin TO-220AB IRF630PBF
- Vishay Single 1 Type N-Channel Power MOSFET 200 V, 3-Pin IRFR210PBF
- Vishay Single IRF620S 1 Type N-Channel Power MOSFET 200 V, 3-Pin TO-263 IRF620SPBF
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1