Infineon 500V CoolMOS CE Type N-Channel MOSFET, 4.8 A, 500 V N, 3-Pin TO-252 IPD50R1K4CEAUMA1

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Subtotal (1 pack of 50 units)*

HK$197.15

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Per unit
Per Pack*
50 - 600HK$3.943HK$197.15
650 - 1200HK$3.845HK$192.25
1250 +HK$3.785HK$189.25

*price indicative

Packaging Options:
RS Stock No.:
218-3047
Mfr. Part No.:
IPD50R1K4CEAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.8A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252

Series

500V CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.83V

Typical Gate Charge Qg @ Vgs

8.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

25W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Automotive Standard

No

The Infineon 500V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

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