Vishay IRF740AS Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263
- RS Stock No.:
- 256-7276
- Mfr. Part No.:
- IRF740ASPBF
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
HK$563.10
FREE delivery for orders over HK$250.00
In Stock
- Plus 1,000 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | HK$11.262 | HK$563.10 |
| 100 - 450 | HK$10.70 | HK$535.00 |
| 500 - 950 | HK$10.056 | HK$502.80 |
| 1000 + | HK$9.352 | HK$467.60 |
*price indicative
- RS Stock No.:
- 256-7276
- Mfr. Part No.:
- IRF740ASPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | IRF740AS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | +150°C | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series IRF740AS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature +150°C | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRF740AS Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740ASPBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power control tasks in industrial electronic systems. It is supplied in a surface-mount TO-263 package suitable for board-level assembly and is intended for use where robust voltage handling and substantial current capability are required.
Features and Benefits:
• 400V drain-source rating enables high-voltage switching
• 10A continuous drain current supports sustained load drive
• 0.55Ω Rds(on) reduces conduction losses during operation
• 125W power dissipation permits significant thermal load handling
• 36nC typical gate charge allows responsive switching transitions
• ±150°C operating range supports elevated temperature environments
• 10A continuous drain current supports sustained load drive
• 0.55Ω Rds(on) reduces conduction losses during operation
• 125W power dissipation permits significant thermal load handling
• 36nC typical gate charge allows responsive switching transitions
• ±150°C operating range supports elevated temperature environments
Applications
• Suitable for power converters in automation equipment
• Ideal for high-voltage motor drive stages
• Used for switch-mode power supplies in industrial electronics
• Can be used for load switching in power distribution modules
• Used with thermal-management systems in harsh environments
• Ideal for high-voltage motor drive stages
• Used for switch-mode power supplies in industrial electronics
• Can be used for load switching in power distribution modules
• Used with thermal-management systems in harsh environments
What package and mounting style does it use for PCB assembly?
It is supplied in a TO-263 surface-mount package with three pins for direct SMD attachment.
What gate voltage limits should designers observe?
The gate must be kept within ±10V relative to the source to avoid exceeding the gate-source rating.
How does it behave thermally under continuous load?
It can dissipate up to 125W
appropriate heatsinking or board thermal design is required to manage junction temperature.
Are there environmental or approval considerations when specifying it?
It is compliant with RoHS standards for restricted substances.
Related links
- Vishay Type N-Channel MOSFET 400 V, 3-Pin TO-263 IRF740ASPBF
- Vishay IRF740S Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-263
- Vishay IRF740S Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-263 IRF740SPBF
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRF740PBF
- Vishay IRF740A Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRF740APBF
- Vishay IRF740A Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRF740LC Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220 IRF740LCPBF
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220