Infineon ISP Type P-Channel MOSFET, -2.8 A, 40 V Enhancement, 3-Pin SOT-223 ISP25DP06LMSATMA1

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HK$26.20

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Per Pack*
5 - 5HK$5.24HK$26.20
10 - 95HK$4.70HK$23.50
100 - 245HK$4.22HK$21.10
250 - 495HK$3.82HK$19.10
500 +HK$3.42HK$17.10

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Packaging Options:
RS Stock No.:
250-0566
Mfr. Part No.:
ISP25DP06LMSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-2.8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications.

Easy interface to MCU

Fast switching

Avalanche ruggedness

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