Infineon ISP Type P-Channel MOSFET, -3.70 A, 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1
- RS Stock No.:
- 243-9276
- Mfr. Part No.:
- ISP650P06NMXTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 1000 units)*
HK$4,823.00
FREE delivery for orders over HK$250.00
- Shipping from 19 August 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | HK$4.823 | HK$4,823.00 |
| 2000 - 2000 | HK$4.726 | HK$4,726.00 |
| 3000 + | HK$4.632 | HK$4,632.00 |
*price indicative
- RS Stock No.:
- 243-9276
- Mfr. Part No.:
- ISP650P06NMXTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.70A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.70A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon ISP Series MOSFET, 60V Maximum Drain‑Source Voltage, 81W Maximum Power Dissipation - ISP650P06NMXTSA1
Features and Benefits:
• -3.70A continuous drain current supports steady‑state load operation
• 80 nC typical gate charge enables controlled switching dynamics
• 60V drain‑source rating allows higher‑voltage switching applications
• 81W power dissipation manages thermal energy in Compact packages
Applications
• Ideal for power rails in industrial control electronics
• Used for load switching in battery management systems
• Can be used for reverse‑polarity and high‑side switching circuits
What ambient temperatures can it operate across?
What package and mounting method does it use?
What gate voltage limits must be observed?
Is it suitable for automotive‑grade applications?
Does it meet environmental substance restrictions?
Related links
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223 ISP650P06NMXTSA1
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