Infineon BSS Type N-Channel MOSFET, 2.30 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1
- RS Stock No.:
- 250-0555
- Mfr. Part No.:
- BSS306NH6327XTSA1
- Manufacturer:
- Infineon
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HK$2,361.00
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- 15,000 unit(s) ready to ship from another location
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | HK$0.787 | HK$2,361.00 |
| 6000 - 6000 | HK$0.763 | HK$2,289.00 |
| 9000 + | HK$0.74 | HK$2,220.00 |
*price indicative
- RS Stock No.:
- 250-0555
- Mfr. Part No.:
- BSS306NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 30V Maximum Drain-Source Voltage, 2.30A Maximum Continuous Drain Current - BSS306NH6327XTSA1
This MOSFET is an N-channel enhancement device designed for surface-mount power switching in Compact assemblies. It operates across a wide temperature range and is suitable for demanding environments requiring low conduction losses and moderate switching capability. The package supports automated placement and is compatible with typical board-level thermal management approaches.
Features and Benefits:
• 57mΩ RDS(on) reduces conduction losses during switching
• 80 nC typical gate charge enables controlled switching transitions
• 81W power dissipation supports high single-package power handling
• 20V gate tolerance allows flexibility in gate-drive choice
• -55°C to +150°C rating sustains operation in extreme temperatures
• 80 nC typical gate charge enables controlled switching transitions
• 81W power dissipation supports high single-package power handling
• 20V gate tolerance allows flexibility in gate-drive choice
• -55°C to +150°C rating sustains operation in extreme temperatures
Applications
• Suitable for automotive sensor power switching
• Ideal for Compact DC power management circuits
• Used with low-voltage motor drivers and load switches
• Can be used for battery protection and distribution modules
• Suitable for surface-mounted power supply regulation
• Ideal for Compact DC power management circuits
• Used with low-voltage motor drivers and load switches
• Can be used for battery protection and distribution modules
• Suitable for surface-mounted power supply regulation
What thermal range can it reliably operate within?
It is rated to function from -55°C up to +150°C for high-temperature applications.
How does the gate voltage limitation affect drive selection?
The gate can tolerate up to 20V, so driver designs should not exceed this to prevent gate stress.
What package and mounting style does it use?
It is supplied in a SOT-23 package intended for surface mounting and suitable for automated PCB assembly.
What conduction performance can be expected during on-state?
The device exhibits a maximum drain-source resistance of 57mΩ, lowering voltage drop under load.
Is it suitable for regulated power dissipation scenarios?
It supports a maximum power dissipation of 81W, allowing use in moderately high-power single-device applications.
Related links
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