Infineon BSS Type N-Channel MOSFET, 170 mA, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1

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HK$3,336.00

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3000 - 3000HK$1.112HK$3,336.00
6000 - 6000HK$1.078HK$3,234.00
9000 +HK$1.046HK$3,138.00

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RS Stock No.:
250-0550
Mfr. Part No.:
BSS169H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

100V

Series

BSS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12000mΩ

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon BSS Series MOSFET, 100V Drain-Source Voltage, 0.17A Continuous Drain Current - BSS169H6327XTSA1


This MOSFET is a depletion‑mode N‑channel transistor in a Compact surface‑mount package designed for control and switching in constrained assemblies. It operates across a wide ambient range and is suitable for electrically demanding environments where thermal endurance and low‑voltage gate control are required. The device is RoHS‑compliant and meets an automotive qualification for use in vehicle electronics.

Features and Benefits:


• Depletion channel allows normally‑on operation for fail‑safe circuits
• Wide temperature tolerance enables operation from -55°C to +150°C
• Low continuous current supports precision low‑current control
• High voltage rating protects against transients up to 100V
• SOT‑23 package provides Compact surface‑mount assembly

Applications


• Ideal for analogue biasing and level‑shift networks
• Suitable for small‑signal load switching in control modules
• Used with sensor interfaces requiring normally‑on behaviour
• Can be used for automotive ancillary circuitry conforming to AEC‑Q101
• Suitable for Compact power‑management subcircuits

What is the maximum gate‑to‑source voltage the device can accept?


It tolerates up to 20V between gate and source.

How much power can it dissipate during operation?


The device has a maximum power dissipation of 81W.

What gate charge should designers budget for at Vgs?


Typical total gate charge is 80 nC measured at the specified gate drive.

What is the on‑resistance characteristic relevant for thermal planning?


The maximum drain-source resistance is 12 000mΩ under specified conditions.

Is this device packaged for automated PCB assembly?


Yes, it is supplied in a SOT‑23 surface‑mount package.

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