STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

RS Stock No.:: 248-9687P
Mfr. Part No.:: STP60N043DM9
Manufacturer:: STMicroelectronics

STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal 10 units (supplied in a tube)*

HK$953.00

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Units	Per unit
10 - 19	HK$95.30
20 - 29	HK$93.10
30 - 39	HK$90.90
40 +	HK$88.70

*price indicative

RS Stock No.:: 248-9687P
Mfr. Part No.:: STP60N043DM9
Manufacturer:: STMicroelectronics

Specifications

Product overview and Technical data sheets

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Product Details

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Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	55A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	STP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	45mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	245W
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	175°C
	Height	4.6mm
	Length	28.9mm
	Standards/Approvals	UL
	Width	10.4mm
	Automotive Standard	AEC-Q101

	Select all
	Brand STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 55A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series STP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 45mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 245W
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 175°C
	Height 4.6mm
	Length 28.9mm
	Standards/Approvals UL
	Width 10.4mm
	Automotive Standard AEC-Q101

Datasheet - STP60N043DM9

The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The fast recovery diode featuring very low recovery charge, time and RDS on makes this fast switching super junction power MOSFET tailored for the most demanding high efficiency bridge topologies and ZVS phase shift converters.

Fast recovery body diode

Worldwide best RDS on per area among silicon based fast recovery devices

Low gate charge, input capacitance and resistance

100 percent avalanche tested

Extremely dv/dt ruggedness

STMicroelectronics STP N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220

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